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Transistors
2SD1350, 2SD1350A
Silicon NPN triple diffusion planar type
For high breakdown voltage switching Features
* High collector-base voltage (Emitter open) VCBO * Large collector power dissipation PC * Low collector-emitter saturation voltage VCE(sat) * M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
6.90.1
(0.4)
Unit: mm
2.50.1 (1.0) (1.5)
3.50.1 (1.0) 2.00.2 2.40.2
(1.5)
R 0.9 R 0.7
Parameter Collector-base voltage (Emitter open) 2SD1350 2SD1350A
Symbol VCBO VCEO VEBO IC ICP
*
Rating 400 600 400 500
Unit V
1.00.1
(0.85)
1.250.05
0.450.05
0.550.1
Collector-emitter voltage 2SD1350 (Base open) 2SD1350A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
V
3 2 (2.5) 1
5 500 1 1 150 -55 to +150
V mA A W C C
(2.5)
1: Base 2: Collector 3: Emitter M-A1 Package
PC Tj Tstg
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD1350 2SD1350A 2SD1350 2SD1350A VEBO hFE VCE(sat) VBE(sat) fT Cob ton tf tstg IE = 100 A, IC = 0 VCE = 5 V, IC = 30 mA IC = 250 mA, IB = 50 mA IC = 250 mA, IB = 50 mA VCB = 30 V, IE = -20 mA, f = 200 MHz VCB = 30 V, IE = 0, f = 1 MHz VCC = 200 V, IC = 100 mA IB1 = 10 mA, IB2 = -10 mA VCC = 200 V, IC = 100 mA IB1 = 10 mA, IB2 = -10 mA VCC = 200 V, IC = 100 mA IB1 = 10 mA, IB2 = -10 mA 0.4 0.7 3.6 55 7 VCEO IC = 500 A, IB = 0 Symbol VCBO Conditions IC = 100 A, IE = 0 Min 400 600 400 500 5 30 1.5 1.5 V V V MHz pF s s s V Typ Max Unit V
Emitter-base voltage (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Fall time Storage time
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4.10.2
Absolute Maximum Ratings Ta = 25C
4.50.1
Publication date: November 2002
SJC00218BED
1
2SD1350, 2SD1350A
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
120
IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / I B = 5
Collector power dissipation PC (W)
1.0
100
Collector current IC (mA)
10
0.8
80 IB = 1.0 mA 60 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 2 4 6 8 10 12
0.6
1
Ta = 75C 25C -25C
0.4
40
0.1
0.2
20
0
0
0
20
40
60
80 100 120 140 160
0.01
1
10
100
1 000
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) IC
100
hFE IC
120 VCE = 5 V
60
fT I E
VCB = 30 V Ta = 25C
Base-emitter saturation voltage VBE(sat) (V)
IC / I B = 5
Forward current transfer ratio hFE
10
80 Ta = 75C 25C 40 -25C
Transition frequency fT (MHz)
100
50
40
25C 1 Ta = -25C 75C
60
30
20
0.1
20
10
0.01
1
10
100
1 000
0
1
10
100
1 000
0 - 0.001
- 0.01
- 0.1
-1
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (A)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
30 IE = 0 f = 1 MHz Ta = 25C
25
20
15
10
5
0 10
100
1 000
Collector-base voltage VCB (V)
2
SJC00218BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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